Discrete Semiconductor Products

RTQ035N03TR

NRND

MOSFET N-CH 30V 3.5A TSMT6

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Discrete Semiconductor Products

NRND

MOSFET N-CH 30V 3.5A TSMT6

Technical Specifications

Parameters and characteristics for this part

Specification	RTQ035N03TR

Current - Continuous Drain (Id) @ 25°C	3.5 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.4 nC
Input Capacitance (Ciss) (Max) @ Vds	285 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SOT-23-6 Thin, TSOT-23-6
Power Dissipation (Max) [Max]	1.25 W
Rds On (Max) @ Id, Vgs	54 mOhm
Supplier Device Package	TSMT6 (SC-95)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Technology	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]
Rohm Semiconductor RTQ035N03TR	2.5 V	4.5 V	6.4 nC	150 °C	30 V	285 pF	SOT-23-6 Thin TSOT-23-6	12 V	3.5 A	1.25 W	TSMT6 (SC-95)	54 mOhm	1.5 V	MOSFET (Metal Oxide)	N-Channel	Surface Mount
Rohm Semiconductor RTQ035P02TR	2.5 V	4.5 V		150 °C	20 V	1200 pF	SOT-23-6 Thin TSOT-23-6	12 V	3.5 A	1.25 W	TSMT6 (SC-95)	65 mOhm	2 V	MOSFET (Metal Oxide)	P-Channel	Surface Mount	10.5 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 30 V 3.5A (Ta) 1.25W (Ta) Surface Mount TSMT6 (SC-95)

Technical documentation and resources