NGTB20N120FL2WG

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ON Semiconductor

IGBT 1200V 20A TO247-3

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NGTB20N120FL2WG

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ON Semiconductor

IGBT 1200V 20A TO247-3

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Technical Specifications

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Specification	NGTB20N120FL2WG

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NGTB20N120IHL Series

IGBT, 1350V 20A FS2-RC Induction Heating

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Test Condition	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C
ON Semiconductor NGTB20N120IHWG	-40 C	175 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop	-	170 ns	80 A	150 nC	341 W	1200 V	2.65 V	480 µJ	40 A	Through Hole	TO-247-3
ON Semiconductor NGTB20N120IHLWG	-55 °C	150 °C	TO-247-3	10 Ohm 15 V 20 A 600 V			235 ns	200 A	200 nC	192 W	1200 V		700 µJ	40 A	Through Hole	TO-247-3
ON Semiconductor NGTB20N120LWG	-55 °C	150 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop			200 A	200 nC	192 W	1200 V		3.1 mJ 700 µJ	40 A	Through Hole	TO-247-3	86 ns 235 ns
ON Semiconductor NGTB20N135IHRWG	-40 C	175 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop	-	245 ns	120 A	234 nC	394 W	1350 V	2.65 V	600 µJ	40 A	Through Hole	TO-247
ON Semiconductor NGTB20N120FL2WG
ON Semiconductor NGTB20N120IHTG

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Description

General part information

NGTB20N120IHL Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.

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