Discrete Semiconductor Products

NGTB20N135IHRWG

Obsolete

ON Semiconductor

IGBT, 1350V 20A FS2-RC INDUCTION HEATING

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DocumentsPackage Drawing-340AL-TO-247 Datasheet

Discrete Semiconductor Products

NGTB20N135IHRWG

Obsolete

ON Semiconductor

IGBT, 1350V 20A FS2-RC INDUCTION HEATING

Deep-Dive with AI

DocumentsPackage Drawing-340AL-TO-247 Datasheet

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NGTB20N135IHRWG

Current - Collector (Ic) (Max) [Max]	40 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	234 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-40 C
Package / Case	TO-247-3
Power - Max [Max]	394 W
Supplier Device Package	TO-247
Switching Energy	600 µJ
Td (on/off) @ 25°C	-
Td (on/off) @ 25°C	245 ns
Test Condition	600 V, 20 A, 10 Ohm, 15 V
Vce(on) (Max) @ Vge, Ic	2.65 V
Voltage - Collector Emitter Breakdown (Max) [Max]	1350 V

NGTB20N120IHL Series

IGBT, 1350V 20A FS2-RC Induction Heating

Part	Operating Temperature [Min]	Operating Temperature [Max]	Package / Case	Test Condition	IGBT Type	Td (on/off) @ 25°C	Td (on/off) @ 25°C	Current - Collector Pulsed (Icm)	Gate Charge	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce(on) (Max) @ Vge, Ic	Switching Energy	Current - Collector (Ic) (Max) [Max]	Mounting Type	Supplier Device Package	Td (on/off) @ 25°C
ON Semiconductor NGTB20N120IHWG	-40 C	175 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop	-	170 ns	80 A	150 nC	341 W	1200 V	2.65 V	480 µJ	40 A	Through Hole	TO-247-3
ON Semiconductor NGTB20N120IHLWG	-55 °C	150 °C	TO-247-3	10 Ohm 15 V 20 A 600 V			235 ns	200 A	200 nC	192 W	1200 V		700 µJ	40 A	Through Hole	TO-247-3
ON Semiconductor NGTB20N120LWG	-55 °C	150 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop			200 A	200 nC	192 W	1200 V		3.1 mJ 700 µJ	40 A	Through Hole	TO-247-3	86 ns 235 ns
ON Semiconductor NGTB20N135IHRWG	-40 C	175 °C	TO-247-3	10 Ohm 15 V 20 A 600 V	Trench Field Stop	-	245 ns	120 A	234 nC	394 W	1350 V	2.65 V	600 µJ	40 A	Through Hole	TO-247
ON Semiconductor NGTB20N120FL2WG
ON Semiconductor NGTB20N120IHTG

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NGTB20N120IHL Series

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Field Stop (FS) Trench construction, and provides superior performance in demanding switching applications, offering both low on-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free wheeling diode with a low forward voltage.