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Discrete Semiconductor Products

SIR4608DP-T1-GE3

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Vishay General Semiconductor - Diodes Division

N-CHANNEL 60 V (D-S) MOSFET POWE

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PowerPAK-SO-8-SingleTop-Bottom
Discrete Semiconductor Products

SIR4608DP-T1-GE3

Active
Vishay General Semiconductor - Diodes Division

N-CHANNEL 60 V (D-S) MOSFET POWE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationSIR4608DP-T1-GE3
Current - Continuous Drain (Id) @ 25°C13.1 A, 42.8 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]7.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]18 nC
Input Capacitance (Ciss) (Max) @ Vds740 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CasePowerPAK® SO-8
Power Dissipation (Max)3.6 W, 39 W
Rds On (Max) @ Id, Vgs11.8 mOhm
Supplier Device PackagePowerPAK® SO-8
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.70
10$ 1.08
Digi-Reel® 1$ 1.70
10$ 1.08
Tape & Reel (TR) 3000$ 0.41

Description

General part information

SIR4608 Series

N-Channel 60 V 13.1A (Ta), 42.8A (Tc) 3.6W (Ta), 39W (Tc) Surface Mount PowerPAK® SO-8

Documents

Technical documentation and resources