SIR4608 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
N-CHANNEL 60 V (D-S) MOSFET POWE
| Part | FET Type | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Technology | Current - Continuous Drain (Id) @ 25°C | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 4.5 V 10 V | 20 V | PowerPAK® SO-8 | 23 nC | 3.6 W 39 W | MOSFET (Metal Oxide) | 13.3 A 43.4 A | 3 V | -55 °C | 150 °C | 60 V | 11.5 mOhm | Surface Mount | 905 pF | PowerPAK® SO-8 | |||
Vishay General Semiconductor - Diodes Division | N-Channel | 20 V | PowerPAK® SO-8 | 3.6 W 39 W | MOSFET (Metal Oxide) | 13.1 A 42.8 A | 4 V | -55 °C | 150 °C | 60 V | 11.8 mOhm | Surface Mount | 740 pF | PowerPAK® SO-8 | 18 nC | 10 V | 7.5 V |