Discrete Semiconductor Products
MJD127T4
ActiveSTMicroelectronics
LOW VOLTAGE PNP POWER DARLINGTON TRANSISTOR
Discrete Semiconductor Products
MJD127T4
ActiveSTMicroelectronics
LOW VOLTAGE PNP POWER DARLINGTON TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | MJD127T4 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 8 A |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 1000 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-252-3, SC-63, DPAK (2 Leads + Tab) |
| Power - Max [Max] | 20 W |
| Supplier Device Package | DPAK |
| Transistor Type | PNP - Darlington |
| Vce Saturation (Max) @ Ib, Ic | 4 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 100 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.33 | |
| 13136 | $ 1.06 | |||
Description
General part information
MJD127 Series
The devices are manufactured in planar technology with "base island" layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage.
Documents
Technical documentation and resources