Discrete Semiconductor Products

SI2356DS-T1-GE3

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MOSFET N-CH 40V 4.3A TO236

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Discrete Semiconductor Products

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MOSFET N-CH 40V 4.3A TO236

Technical Specifications

Parameters and characteristics for this part

Specification	SI2356DS-T1-GE3

Current - Continuous Drain (Id) @ 25°C	4.3 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	2.5 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-3, TO-236-3, SC-59
Power Dissipation (Max)	1.7 W, 960 mW
Rds On (Max) @ Id, Vgs	51 mOhm
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.5 V

Part	Vgs(th) (Max) @ Id	Package / Case	Rds On (Max) @ Id, Vgs	Supplier Device Package	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On) [Min]	Drive Voltage (Max Rds On, Min Rds On) [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Vishay General Semiconductor - Diodes Division SI2356DS-T1-GE3	1.5 V	SC-59 SOT-23-3 TO-236-3	51 mOhm	SOT-23-3 (TO-236)	MOSFET (Metal Oxide)	-55 °C	150 °C	1.7 W 960 mW	4.3 A	N-Channel	10 V	2.5 V	13 nC	40 V	Surface Mount	370 pF	12 V

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General part information

N-Channel 40 V 4.3A (Tc) 960mW (Ta), 1.7W (Tc) Surface Mount SOT-23-3 (TO-236)

Technical documentation and resources