SI2356 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
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⌘K
MOSFET N-CH 40V 4.3A TO236
| Part | Vgs(th) (Max) @ Id | Package / Case | Rds On (Max) @ Id, Vgs | Supplier Device Package | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | FET Type | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Mounting Type | Input Capacitance (Ciss) (Max) @ Vds | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | 1.5 V | SC-59 SOT-23-3 TO-236-3 | 51 mOhm | SOT-23-3 (TO-236) | MOSFET (Metal Oxide) | -55 °C | 150 °C | 1.7 W 960 mW | 4.3 A | N-Channel | 10 V | 2.5 V | 13 nC | 40 V | Surface Mount | 370 pF | 12 V |