Discrete Semiconductor Products
TIP29A
ActiveSTMicroelectronics
COMPLEMENTARY SILICON POWER TRANSISTORS
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Search across all available documentation for this part.
Discrete Semiconductor Products
TIP29A
ActiveSTMicroelectronics
COMPLEMENTARY SILICON POWER TRANSISTORS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | TIP29A |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 1 A |
| Current - Collector Cutoff (Max) [Max] | 300 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 hFE |
| Mounting Type | Through Hole |
| Operating Temperature | 150 °C |
| Package / Case | TO-220-3 |
| Power - Max [Max] | 2 W |
| Supplier Device Package | TO-220 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic | 700 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 60 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 0 | $ 0.00 | |
| 1686 | $ 1.04 | |||
Description
General part information
TIP29A Series
The devices are manufactured in Planar technology with "Base Island" layout. The resulting transistor shows exceptional high gain performance coupled with very low saturation voltage. The PNP types are TIP30A and TIP30C.
Documents
Technical documentation and resources