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Discrete Semiconductor Products

CSD13306WT

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM

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YZC-6-BGA Pkg
Discrete Semiconductor Products

CSD13306WT

Active
Texas Instruments

12-V, N CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 10.2 MOHM

Technical Specifications

Parameters and characteristics for this part

SpecificationCSD13306WT
Current - Continuous Drain (Id) @ 25°C3.5 A
Drain to Source Voltage (Vdss)12 V
Drive Voltage (Max Rds On, Min Rds On)4.5 V, 2.5 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]11.2 nC
Input Capacitance (Ciss) (Max) @ Vds1370 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseDSBGA, 6-UFBGA
Power Dissipation (Max)1.9 W
Rds On (Max) @ Id, Vgs10.2 mOhm
Supplier Device Package6-DSBGA (1x1.5)
TechnologyMOSFET (Metal Oxide)
Vgs (Max)10 V
Vgs(th) (Max) @ Id1.3 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.07
10$ 0.88
100$ 0.68
Digi-Reel® 1$ 1.07
10$ 0.88
100$ 0.68
Tape & Reel (TR) 250$ 0.52
500$ 0.47
750$ 0.45
1250$ 0.42
1750$ 0.40
Texas InstrumentsSMALL T&R 1$ 0.92
100$ 0.63
250$ 0.48
1000$ 0.32

Description

General part information

CSD13306W Series

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.