CSD13306W Series

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Part	Vgs (Max)	FET Type	Rds On (Max) @ Id, Vgs	Package / Case	Power Dissipation (Max)	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Texas Instruments CSD13306WT	10 V	N-Channel	10.2 mOhm	6-UFBGA DSBGA	1.9 W	6-DSBGA (1x1.5)	11.2 nC	MOSFET (Metal Oxide)	3.5 A	1370 pF	2.5 V 4.5 V	Surface Mount	12 V	-55 °C	150 °C	1.3 V

Catalog

12-V, N channel NexFET™ power MOSFET, single WLP 1 mm x 1.5 mm, 10.2 mOhm

Key Features

• Ultra Low on ResistanceLow Qgand QgdSmall Footprint 1 × 1.5 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen FreeUltra Low on ResistanceLow Qgand QgdSmall Footprint 1 × 1.5 mmLow Profile 0.62 mm HeightPb FreeRoHS CompliantHalogen Free

Description

This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile. This 8.8 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics and an ultra low profile.