Discrete Semiconductor Products

STF10NK50Z

Obsolete

MOSFET N-CH 500V 9A TO220FP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 9A TO220FP

Technical Specifications

Parameters and characteristics for this part

Specification	STF10NK50Z

Current - Continuous Drain (Id) @ 25°C	9 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	39.2 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	1219 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs	700 mOhm
Supplier Device Package	TO-220FP
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Mounting Type	Supplier Device Package	FET Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Operating Temperature
STMicroelectronics STF10NK50Z	150 °C	-55 °C	MOSFET (Metal Oxide)	Through Hole	TO-220FP	N-Channel	TO-220-3 Full Pack	9 A	700 mOhm	4.5 V	30 V	1219 pF	39.2 nC	10 V	500 V
STMicroelectronics STF10NM65N			MOSFET (Metal Oxide)	Through Hole	TO-220FP	N-Channel	TO-220-3 Full Pack	9 A	480 mOhm	4 V	25 V		25 nC	10 V	650 V	850 pF	25 W	150 °C
STMicroelectronics STF10NM50N	150 °C	-55 °C	MOSFET (Metal Oxide)	Through Hole	TO-220FP	N-Channel	TO-220-3 Full Pack	7 A	630 mOhm	4 V	25 V	450 pF	17 nC	10 V	500 V		25 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	0	$ 0.00

General part information

N-Channel 500 V 9A (Tc) 30W (Tc) Through Hole TO-220FP

Technical documentation and resources