Discrete Semiconductor Products

FQI5N50CTU

Obsolete

MOSFET N-CH 500V 5A I2PAK

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 500V 5A I2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	FQI5N50CTU

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	24 nC
Input Capacitance (Ciss) (Max) @ Vds	625 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max) [Max]	73 W
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	TO-262 (I2PAK)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)
ON Semiconductor FQI5N50CTU	24 nC	MOSFET (Metal Oxide)	TO-262 (I2PAK)	5 A	500 V	73 W	Through Hole	-55 °C	150 °C	10 V	4 V	N-Channel	625 pF	1.4 Ohm	I2PAK TO-262-3 Long Leads TO-262AA	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 5A (Tc) 73W (Tc) Through Hole TO-262 (I2PAK)

Technical documentation and resources

No documents available