FQI5 Series

Catalog

MOSFET N-CH 500V 5A I2PAK

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	FET Type	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Package / Case	Vgs (Max)
ON Semiconductor FQI5N50CTU	24 nC	MOSFET (Metal Oxide)	TO-262 (I2PAK)	5 A	500 V	73 W	Through Hole	-55 °C	150 °C	10 V	4 V	N-Channel	625 pF	1.4 Ohm	I2PAK TO-262-3 Long Leads TO-262AA	30 V