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Discrete Semiconductor Products

RQ3N040ATTB1

Active
Rohm Semiconductor

MOSFET, P-CHANNEL, 80V, 10A, HSMT ROHS COMPLIANT: YES

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Product dimension image
Discrete Semiconductor Products

RQ3N040ATTB1

Active
Rohm Semiconductor

MOSFET, P-CHANNEL, 80V, 10A, HSMT ROHS COMPLIANT: YES

Technical Specifications

Parameters and characteristics for this part

SpecificationRQ3N040ATTB1
Current - Continuous Drain (Id) @ 25°C10 A, 4 A
Drain to Source Voltage (Vdss)80 V
Drive Voltage (Max Rds On, Min Rds On)10 V, 6 V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]22 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]930 pF
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case8-PowerVDFN
Power Dissipation (Max)2 W, 15 W
Rds On (Max) @ Id, Vgs126 mOhm
Supplier Device Package [custom]8-HSMT
Supplier Device Package [x]3.2
Supplier Device Package [y]3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 2997$ 1.58
NewarkEach (Supplied on Cut Tape) 1$ 1.22
10$ 0.83
25$ 0.75
50$ 0.67
100$ 0.58
250$ 0.55
500$ 0.52
1000$ 0.45

Description

General part information

RQ3N040AT Series

RQ3N040AT is a power MOSFET with low-on resistance and High power package, suitable for switching and motor drives.

Documents

Technical documentation and resources

RQ3N040AT Data Sheet

Data Sheet

PCB Layout Thermal Design Guide

Thermal Design

Basics of Thermal Resistance and Heat Dissipation

Thermal Design

What Is Thermal Design

Thermal Design

Notes for Calculating Power Consumption:Static Operation

Thermal Design

P-channel Power MOSFETs selection guide

Technical Article

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

HSMT8(TB1) Explanation for Marking

Package Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

Condition of Soldering / Land Pattern Reference

Package Information

RQ3N040AT ESD Data

Characteristics Data

HSMT8(TB1) Taping Information

Package Information

Anti-Whisker formation - Transistors

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Two-Resistor Model for Thermal Simulation

Thermal Design

About Export Regulations

Export Information

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Thermal Design

Notes for Temperature Measurement Using Forward Voltage of PN Junction

Thermal Design

Types and Features of Transistors

Application Note

Notes for Temperature Measurement Using Thermocouples

Thermal Design

How to Use LTspice® Models

Schematic Design & Verification

Calculation of Power Dissipation in Switching Circuit

Schematic Design & Verification

Precautions When Measuring the Rear of the Package with a Thermocouple

Thermal Design

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

HSMT8(TB1) Dimension

Package Information

What is a Thermal Model? (Transistor)

Thermal Design

Part Explanation

Application Note

About Flammability of Materials

Environmental Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Compliance of the RoHS directive

Environmental Data

MOSFET Gate Resistor Setting for Motor Driving

Technical Article