Specification	SSM3K341R,LXHF

Current - Continuous Drain (Id) @ 25°C	6 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9.3 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	550 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-23-3 Flat Leads
Power Dissipation (Max)	1.2 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	36 mOhm
Supplier Device Package	SOT-23F
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.5 V

SSM3K341R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-23F

Part	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Max]	Operating Temperature [Min]	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	FET Type	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Operating Temperature	Qualification	Grade
Toshiba Semiconductor and Storage SSM3K341R,LF	4 V	10 V	SOT-23F	9.3 nC	MOSFET (Metal Oxide)	20 V	1.2 W	2.5 V	6 A	175 °C	-55 °C	Surface Mount	SOT-23-3 Flat Leads	60 V	N-Channel	36 mOhm	550 pF
Toshiba Semiconductor and Storage SSM3K341R,LXHF	4 V	10 V	SOT-23F	9.3 nC	MOSFET (Metal Oxide)	20 V	1.2 W	2.5 V	6 A			Surface Mount	SOT-23-3 Flat Leads	60 V	N-Channel	36 mOhm	550 pF	175 °C	AEC-Q101	Automotive

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-23F

Technical documentation and resources