High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-23F
High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 60 V, 6.0 A, 0.036 Ω@10V, SOT-23F
| Part | Drive Voltage (Max Rds On, Min Rds On) [Max] | Drive Voltage (Max Rds On, Min Rds On) [Min] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Technology | Vgs (Max) | Power Dissipation (Max) | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Operating Temperature [Max] | Operating Temperature [Min] | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | FET Type | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Operating Temperature | Qualification | Grade |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 4 V | 10 V | SOT-23F | 9.3 nC | MOSFET (Metal Oxide) | 20 V | 1.2 W | 2.5 V | 6 A | 175 °C | -55 °C | Surface Mount | SOT-23-3 Flat Leads | 60 V | N-Channel | 36 mOhm | 550 pF | |||
 Toshiba Semiconductor and Storage | 4 V | 10 V | SOT-23F | 9.3 nC | MOSFET (Metal Oxide) | 20 V | 1.2 W | 2.5 V | 6 A | Surface Mount | SOT-23-3 Flat Leads | 60 V | N-Channel | 36 mOhm | 550 pF | 175 °C | AEC-Q101 | Automotive |