Discrete Semiconductor Products

STGP30H60DFB

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STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

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Search across all available documentation for this part.

DocumentsDatasheet Product Change Notice EN +12

Discrete Semiconductor Products

STGP30H60DFB

Active

STMicroelectronics

TRENCH GATE FIELD-STOP 600 V, 30 A HIGH SPEED HB SERIES IGBT

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DocumentsDatasheet Product Change Notice EN +12

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STGP30H60DFB

Current - Collector (Ic) (Max) [Max]	60 A
Current - Collector Pulsed (Icm)	120 A
Gate Charge	149 nC
IGBT Type	Trench Field Stop
Mounting Type	Through Hole
Operating Temperature [Max]	175 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power - Max [Max]	260 W
Reverse Recovery Time (trr)	53 ns
Supplier Device Package	TO-220
Switching Energy	383 µJ, 293 µJ
Td (on/off) @ 25°C [custom]	37 ns
Td (on/off) @ 25°C [custom]	146 ns
Test Condition	30 A, 10 Ohm, 15 V, 400 V
Vce(on) (Max) @ Vge, Ic	2 V
Voltage - Collector Emitter Breakdown (Max) [Max]	600 V

STGP30 Series

Part	Operating Temperature [Max]	Operating Temperature [Min]	IGBT Type	Mounting Type	Power - Max [Max]	Supplier Device Package	Switching Energy	Td (on/off) @ 25°C [custom]	Td (on/off) @ 25°C [custom]	Current - Collector Pulsed (Icm)	Reverse Recovery Time (trr)	Package / Case	Vce(on) (Max) @ Vge, Ic	Gate Charge	Current - Collector (Ic) (Max) [Max]	Test Condition	Voltage - Collector Emitter Breakdown (Max) [Max]	Td (on/off) @ 25°C
STMicroelectronics STGP30H60DFB	175 °C	-55 °C	Trench Field Stop	Through Hole	260 W	TO-220	293 µJ 383 µJ	37 ns	146 ns	120 A	53 ns	TO-220-3	2 V	149 nC	60 A	10 Ohm 15 V 30 A 400 V	600 V
STMicroelectronics STGP30V60F	175 °C	-55 °C	Trench Field Stop	Through Hole	260 W	TO-220	233 µJ 383 µJ			120 A		TO-220-3	2.3 V	163 nC	60 A	10 Ohm 15 V 30 A 400 V	600 V	45 ns 189 ns
STMicroelectronics STGP30IH65DF	175 °C	-55 °C	Trench Field Stop	Through Hole	180 W	TO-220				90 A		TO-220-3	2.05 V	80 nC	60 A	15 V 22 Ohm 30 A 400 V	650 V
STMicroelectronics STGP30V60DF	175 °C	-55 °C	Trench Field Stop	Through Hole	258 W	TO-220	233 µJ 383 µJ			120 A	53 ns	TO-220-3	2.3 V	163 nC	60 A	10 Ohm 15 V 30 A 400 V	600 V	45 ns 189 ns
STMicroelectronics STGP30H65F	175 °C	-55 °C	Trench Field Stop	Through Hole	260 W	TO-220	350 µJ 400 µJ	50 ns	160 ns	120 A		TO-220-3	2.4 V	105 nC	60 A	10 Ohm 15 V 30 A 400 V	650 V
STMicroelectronics STGP30NC60S	150 °C	-55 °C		Through Hole	175 W	TO-220	1.28 mJ 300 µJ	21.5 ns	180 ns	150 A		TO-220-3	1.9 V	96 nC	55 A	10 Ohm 15 V 20 A 480 V	600 V
STMicroelectronics STGP30NC60K	150 °C	-55 °C		Through Hole	185 W	TO-220	350 µJ 435 µJ	29 ns	120 ns	125 A		TO-220-3	2.7 V	96 nC	60 A	10 Ohm 15 V 20 A 480 V	600 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	N/A	893	$ 3.04
	Tube	1	$ 2.94
		50	$ 1.45
		100	$ 1.36
		500	$ 1.18
		1000	$ 1.02
		2000	$ 0.95
		5000	$ 0.93
Newark	Each	1	$ 3.56
		10	$ 2.04
		100	$ 1.90
		500	$ 1.64
		1000	$ 1.55
		3000	$ 1.48
		5000	$ 1.46

Description

General part information

STGP30 Series

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGP30H60DFB

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STGP30H60DFB

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Technical Specifications

STGP30 Series

Pricing

Description

STGP30 Series

Documents

Datasheet

Product Change Notice EN

Technical Data Sheet EN

Flyers

TN1224

TN1225

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TN1378

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AN4544

AN4694

AN5277

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STGP30 Series