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STP14NK60ZFP
Discrete Semiconductor Products

STP14NK60ZFP

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STMicroelectronics

N-CHANNEL 600 V, 0.45 OHM TYP., 13.5 A SUPERMESH POWER MOSFET IN TO-220FP PACKAGE

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STP14NK60ZFP
Discrete Semiconductor Products

STP14NK60ZFP

Active
STMicroelectronics

N-CHANNEL 600 V, 0.45 OHM TYP., 13.5 A SUPERMESH POWER MOSFET IN TO-220FP PACKAGE

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationSTP14NK60ZFP
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]75 nC
Input Capacitance (Ciss) (Max) @ Vds2220 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3 Full Pack
Power Dissipation (Max)40 W
Rds On (Max) @ Id, Vgs500 mOhm
Supplier Device PackageTO-220FP
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyN/A 0$ 5.12
NewarkEach 1$ 1.99

Description

General part information

STP14NK60ZFP Series

These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.