Discrete Semiconductor Products

NX3020NAKT,115

Obsolete

MOSFET N-CH 30V 180MA SC75

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 180MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	NX3020NAKT,115

Current - Continuous Drain (Id) (Ta)	180 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	2.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	0.44 nC
Input Capacitance (Ciss) (Max)	13 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SOT-416, SC-75
Package Name	SC-75
Power Dissipation (Max)	1.06 W, 230 mW
Rds On (Max)	4.5 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	1.5 V

Part	Vgs(th) (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Mounting Type	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Package Name	Package / Case	FET Type	Current - Continuous Drain (Id) (Ta)	Power Dissipation (Max)	Technology	Drain to Source Voltage (Vdss)	Qualification	Grade
NXP USA Inc. NX3020NAKT,115	1.5 V	20 V	13 pF	-55 °C	150 °C	4.5 Ohm	Surface Mount	10 V	2.5 V	0.44 nC	SC-75	SC-75 SOT-416	N-Channel	180 mA	1.06 W 230 mW	MOSFET (Metal Oxide)	30 V
NXP USA Inc. NX3008NBKT,115	1.1 V	8 V	50 pF	-55 °C	150 °C	1.4 Ohm	Surface Mount	4.5 V	1.8 V	0.68 nC	SC-75	SC-75 SOT-416	N-Channel	350 mA	250 mW 770 mW	MOSFET (Metal Oxide)	30 V	AEC-Q101	Automotive

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$	Updated

Digikey	N/A	0	$ 0.00	1m+

3D models and CAD resources for this part

General part information

N-Channel 30 V 180mA (Ta) 230mW (Ta), 1.06W (Tc) Surface Mount SC-75

Technical documentation and resources

No documents available