Discrete Semiconductor Products

NX3008NBKT,115

Obsolete

MOSFET N-CH 30V 350MA SC75

Search across all available documentation for this part.

Discrete Semiconductor Products

Obsolete

MOSFET N-CH 30V 350MA SC75

Technical Specifications

Parameters and characteristics for this part

Specification	NX3008NBKT,115

Current - Continuous Drain (Id) @ 25°C	350 mA
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	0.68 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	50 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-75, SOT-416
Power Dissipation (Max)	770 mW, 250 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	1.4 Ohm
Supplier Device Package	SC-75
Technology	MOSFET (Metal Oxide)
Vgs (Max)	8 V
Vgs(th) (Max) @ Id	1.1 V

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Grade	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Drain to Source Voltage (Vdss)	FET Type	Qualification	Vgs (Max)
Freescale Semiconductor - NXP NX3008NBKT,115	SC-75 SOT-416	-55 °C	150 °C	Surface Mount	1.4 Ohm	350 mA	1.8 V 4.5 V	1.1 V	250 mW 770 mW	SC-75	50 pF	Automotive	0.68 nC	MOSFET (Metal Oxide)	30 V	N-Channel	AEC-Q101	8 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 30 V 350mA (Ta) 250mW (Ta), 770mW (Tc) Surface Mount SC-75

Technical documentation and resources