FDME1034CZT
ActiveMOSFET TRANSISTOR, N AND P CHANNEL, 3.8 A, 20 V, 0.055 OHM, 4.5 V, 700 MV
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FDME1034CZT
ActiveMOSFET TRANSISTOR, N AND P CHANNEL, 3.8 A, 20 V, 0.055 OHM, 4.5 V, 700 MV
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Technical Specifications
Parameters and characteristics for this part
| Specification | FDME1034CZT |
|---|---|
| Configuration | N and P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8 A, 2.6 A |
| Drain to Source Voltage (Vdss) | 20 V |
| FET Feature | Logic Level Gate |
| Gate Charge (Qg) (Max) @ Vgs | 4.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 300 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 600 mW |
| Rds On (Max) @ Id, Vgs [Max] | 66 mOhm |
| Supplier Device Package | 6-MicroFET |
| Supplier Device Package [x] | 1.6 |
| Supplier Device Package [y] | 1.6 |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 1.00 | |
| 10 | $ 0.82 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.44 | |||
| 2000 | $ 0.41 | |||
| Digi-Reel® | 1 | $ 1.00 | ||
| 10 | $ 0.82 | |||
| 100 | $ 0.64 | |||
| 500 | $ 0.54 | |||
| 1000 | $ 0.44 | |||
| 2000 | $ 0.41 | |||
| Tape & Reel (TR) | 5000 | $ 0.39 | ||
| 10000 | $ 0.38 | |||
| 25000 | $ 0.38 | |||
| Newark | Each (Supplied on Full Reel) | 3000 | $ 0.51 | |
| 6000 | $ 0.47 | |||
| 12000 | $ 0.44 | |||
| 18000 | $ 0.41 | |||
| 30000 | $ 0.39 | |||
| ON Semiconductor | N/A | 1 | $ 0.20 | |
Description
General part information
FDME1034CZT Series
This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
Documents
Technical documentation and resources