FDME1034CZT Series

Complementary PowerTrench® MOSFET ±20V

Catalog

Complementary PowerTrench® MOSFET ±20V

Part	Mounting Type	FET Feature	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Configuration	Drain to Source Voltage (Vdss)	Package / Case	Rds On (Max) @ Id, Vgs [Max]	Current - Continuous Drain (Id) @ 25°C	Technology	Supplier Device Package [y]	Supplier Device Package [x]	Supplier Device Package
ON Semiconductor FDME1034CZT	Surface Mount	Logic Level Gate	4.2 nC	-55 °C	150 °C	600 mW	1 V	300 pF	N and P-Channel	20 V	6-UFDFN Exposed Pad	66 mOhm	2.6 A 3.8 A	MOSFET (Metal Oxide)	1.6	1.6	6-MicroFET

Catalog

Complementary PowerTrench® MOSFET ±20V

Key Features

• Q1: N-ChannelMax. RDS(on)= 66 mΩ at VGS= 4.5 V, ID= 3.4AMax. RDS(on)= 86 mΩ at VGS= 2.5 V, ID= 2.9AMax. RDS(on)= 113 mΩ at VGS= 1.8 V, ID= 2.5AMax. RDS(on)= 160 mΩ at VGS= 1.5 V, ID= 2.1A

• Q2: P-ChannelMax. RDS(on)= 142 mΩ at VGS= -4.5 V, ID= -2.3AMax. RDS(on)= 213 mΩ at VGS= -2.5 V, ID= -1.8AMax. RDS(on)= 331 mΩ at VGS= -1.8 V, ID= -1.5AMax. RDS(on)= 530 mΩ at VGS= -1.5 V, ID= -1.2A

• Low profile: 0.55 mm maximum in the new package MicroFET 1.6x1.6Thin

• Free from halogenated compounds and antimony oxides

• HBM ESD protection level > 1600V(see datasheet Note 3)

• RoHS Compliant

Description

This device is designed specifically as a single-package solution for a DC/DC switching MOSFET in cellular handset and other mobile applications. It features an independent N-channel & P-channel MOSFET with low on-state resistance for minimum conduction losses. The gate charge of each MOSFET is also minimized to allow high frequency switching directly from the controlling device.The MicroFET™ 1.6x1.6 thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.