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Technical Specifications
Parameters and characteristics for this part
| Specification | US5U30TR |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 1 A |
| Drain to Source Voltage (Vdss) | 20 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 2.5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 4.5 V |
| FET Feature | Schottky Diode (Isolated) |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 2.1 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 150 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-SMD (5 Leads), Flat Leads |
| Power Dissipation (Max) | 1 W |
| Rds On (Max) @ Id, Vgs [Max] | 390 mOhm |
| Supplier Device Package | TUMT5 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 12 V |
| Vgs(th) (Max) @ Id | 2 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | N/A | 3000 | $ 0.70 | |
| Tape & Reel (TR) | 3000 | $ 0.25 | ||
| 6000 | $ 0.23 | |||
| 9000 | $ 0.22 | |||
| 30000 | $ 0.21 | |||
Description
General part information
US5U30 Series
ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.
Documents
Technical documentation and resources