US5U30 Series

2.5V Drive Pch+SBD MOSFET

Catalog

2.5V Drive Pch+SBD MOSFET

Part	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Package / Case	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Power Dissipation (Max)	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	FET Feature	Operating Temperature
Rohm Semiconductor US5U30TR	150 pF	390 mOhm	2.5 V 4.5 V	Surface Mount	6-SMD (5 Leads) Flat Leads	MOSFET (Metal Oxide)	TUMT5	1 A	2 V	20 V	1 W	P-Channel	12 V	2.1 nC	Schottky Diode (Isolated)	150 °C

Catalog

2.5V Drive Pch+SBD MOSFET

Key Features

• Multiple Schottky Barrier Diodes Middle Power MOSFET, Small Surface Mount Package, Pb Free/RoHS Compliant

Description

ROHM MOSFETs are made as low RDS(on) resistance devices utilizing the micro-processing technologies and available in wide lineup including hybrid types (MOSFET + Schottky Barrier Diode) to meet various needs in the market.