Discrete Semiconductor Products
STTH5L06
LTBSTMicroelectronics
ULTRAFAST DIODE, 600 V, 5 A, SINGLE, 1.3 V, 65 NS, 110 A, DO-201AD, 2 PINS
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Discrete Semiconductor Products
STTH5L06
LTBSTMicroelectronics
ULTRAFAST DIODE, 600 V, 5 A, SINGLE, 1.3 V, 65 NS, 110 A, DO-201AD, 2 PINS
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | STTH5L06 |
|---|---|
| Current - Average Rectified (Io) | 5 A |
| Current - Reverse Leakage @ Vr | 5 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 ░C |
| Package / Case | DO-201AD, Axial |
| Reverse Recovery Time (trr) | 95 ns |
| Speed | 500 ns, 200 mA |
| Supplier Device Package | DO-201AD |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
STTH5L06 Series
The device is developed using ST's Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in continuous mode power factor corrections and hard switching conditions.
This device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
