Discrete Semiconductor Products

IRFD010PBF

Obsolete

MOSFET N-CH 50V 1.7A 4DIP

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 50V 1.7A 4DIP

Technical Specifications

Parameters and characteristics for this part

Specification	IRFD010PBF

Current - Continuous Drain (Id) @ 25°C	1.7 A
Drain to Source Voltage (Vdss)	50 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	13 nC
Input Capacitance (Ciss) (Max) @ Vds	250 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-DIP (0.300", 7.62mm)
Power Dissipation (Max)	1 W
Rds On (Max) @ Id, Vgs	200 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Drive Voltage (Max Rds On, Min Rds On)	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)
Vishay General Semiconductor - Diodes Division IRFD010PBF	N-Channel	4 V	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	1 W	13 nC	250 pF	Through Hole	4-DIP (0.300" 7.62mm)	50 V	200 mOhm	1.7 A	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 50 V 1.7A (Tc) 1W (Tc) Through Hole 4-HVMDIP

Technical documentation and resources