IRFD010 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
Beta
⌘K
MOSFET N-CH 50V 1.7A 4DIP
| Part | FET Type | Vgs(th) (Max) @ Id | Technology | Operating Temperature [Min] | Operating Temperature [Max] | Drive Voltage (Max Rds On, Min Rds On) | Power Dissipation (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Drain to Source Voltage (Vdss) | Rds On (Max) @ Id, Vgs | Current - Continuous Drain (Id) @ 25°C | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Vishay General Semiconductor - Diodes Division | N-Channel | 4 V | MOSFET (Metal Oxide) | -55 °C | 150 °C | 10 V | 1 W | 13 nC | 250 pF | Through Hole | 4-DIP (0.300" 7.62mm) | 50 V | 200 mOhm | 1.7 A | 20 V |