Specification	RN1706,LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	80
Frequency - Transition	250 MHz
Mounting Type	Surface Mount
Package / Case	SOT-353, SC-70-5, 5-TSSOP
Power - Max [Max]	200 mW
Resistor - Base (R1)	4.7 kOhms
Resistor - Emitter Base (R2)	47 kOhms
Supplier Device Package	USV
Transistor Type	2 NPN - Pre-Biased (Dual)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

RN1706 Series

Part	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package	Resistor - Base (R1)	Mounting Type	Resistor - Emitter Base (R2)	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
Toshiba Semiconductor and Storage RN1706JE(TE85L,F)	50 V	2 NPN - Pre-Biased (Dual) (Emitter Coupled)	100 nA	ESV	4.7 kOhms	Surface Mount	47 kOhms	SOT-553	300 mV	80	250 MHz	100 mW	100 mA
Toshiba Semiconductor and Storage RN1706,LF	50 V	2 NPN - Pre-Biased (Dual)	500 nA	USV	4.7 kOhms	Surface Mount	47 kOhms	5-TSSOP SC-70-5 SOT-353	300 mV	80	250 MHz	200 mW	100 mA

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 250MHz 200mW Surface Mount USV

Technical documentation and resources