RN1706 Series
Manufacturer: Toshiba Semiconductor and Storage
Beta
⌘K
TRANS 2NPN PREBIAS 0.1W ESV
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Transistor Type | Current - Collector Cutoff (Max) [Max] | Supplier Device Package | Resistor - Base (R1) | Mounting Type | Resistor - Emitter Base (R2) | Package / Case | Vce Saturation (Max) @ Ib, Ic | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Frequency - Transition | Power - Max [Max] | Current - Collector (Ic) (Max) [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | 50 V | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) | 100 nA | ESV | 4.7 kOhms | Surface Mount | 47 kOhms | SOT-553 | 300 mV | 80 | 250 MHz | 100 mW | 100 mA |
 Toshiba Semiconductor and Storage | 50 V | 2 NPN - Pre-Biased (Dual) | 500 nA | USV | 4.7 kOhms | Surface Mount | 47 kOhms | 5-TSSOP SC-70-5 SOT-353 | 300 mV | 80 | 250 MHz | 200 mW | 100 mA |