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8-ChipFET

Discrete Semiconductor Products

NTHD4401PT1G

Obsolete

ON Semiconductor

POWER MOSFET 20V 3A 155 MOHM DUAL P-CHANNEL CHIPFET

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DocumentsDatasheet Package Drawing-1206A-03-ChipFET 8-Lead +1

8-ChipFET

Discrete Semiconductor Products

NTHD4401PT1G

Obsolete

ON Semiconductor

POWER MOSFET 20V 3A 155 MOHM DUAL P-CHANNEL CHIPFET

Deep-Dive with AI

DocumentsDatasheet Package Drawing-1206A-03-ChipFET 8-Lead +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	NTHD4401PT1G

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	2.1 A
Drain to Source Voltage (Vdss)	20 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	6 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	300 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	1.1 W
Rds On (Max) @ Id, Vgs	155 mOhm
Supplier Device Package	ChipFET™
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1.2 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

NTHD4401P Series

Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™

Documents

Technical documentation and resources

Datasheet

Package Drawing-1206A-03-ChipFET 8-Lead

Package Drawing

Datasheet

NTHD4401P Series

Power MOSFET 20V 3A 155 mOhm Dual P-Channel ChipFET

Part	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Technology
ON Semiconductor NTHD4401PT1G	2 P-Channel	20 V	-55 °C	150 °C	Logic Level Gate	300 pF	ChipFET™	2.1 A	6 nC	1.2 V	Surface Mount	155 mOhm	1.1 W	MOSFET (Metal Oxide)
ON Semiconductor NTHD4401PT1	2 P-Channel	20 V	-55 °C	150 °C	Logic Level Gate	300 pF	ChipFET™	2.1 A	6 nC	1.2 V	Surface Mount	155 mOhm	1.1 W	MOSFET (Metal Oxide)