NTHD4401P Series

Power MOSFET 20V 3A 155 mOhm Dual P-Channel ChipFET

Catalog

Power MOSFET 20V 3A 155 mOhm Dual P-Channel ChipFET

Part	Configuration	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	FET Feature	Input Capacitance (Ciss) (Max) @ Vds [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Vgs(th) (Max) @ Id	Mounting Type	Rds On (Max) @ Id, Vgs	Power - Max [Max]	Technology
ON Semiconductor NTHD4401PT1G	2 P-Channel	20 V	-55 °C	150 °C	Logic Level Gate	300 pF	ChipFET™	2.1 A	6 nC	1.2 V	Surface Mount	155 mOhm	1.1 W	MOSFET (Metal Oxide)
ON Semiconductor NTHD4401PT1	2 P-Channel	20 V	-55 °C	150 °C	Logic Level Gate	300 pF	ChipFET™	2.1 A	6 nC	1.2 V	Surface Mount	155 mOhm	1.1 W	MOSFET (Metal Oxide)

Power MOSFET 20V 3A 155 mOhm Dual P-Channel ChipFET

• Low RDS (ON) and Fast Switching Speed in a ChipFet Package

• Leadless ChipFET Package 40 % Smaller Footprint than TSOP-6

• ChipFET Package with Excellent Thermal Capabilities where Heat Transfer is Required

• Pb-Free Package is Available

Power MOSFET -20 V, -3.0 A, Dual P-Channel ChipFET™