CSD23203WT
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 19.4 MOHM, GATE ESD PROTECTION
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CSD23203WT
Active-8V, P CHANNEL NEXFET™ POWER MOSFET, SINGLE WLP 1 MM X 1.5 MM, 19.4 MOHM, GATE ESD PROTECTION
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Technical Specifications
Parameters and characteristics for this part
| Specification | CSD23203WT |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 3 A |
| Drain to Source Voltage (Vdss) | 8 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5 V, 1.8 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC |
| Input Capacitance (Ciss) (Max) @ Vds | 914 pF |
| Mounting Type | Surface Mount |
| Operating Temperature [Max] | 150 °C |
| Operating Temperature [Min] | -55 °C |
| Package / Case | DSBGA, 6-UFBGA |
| Power Dissipation (Max) | 750 mW |
| Rds On (Max) @ Id, Vgs | 19.4 mOhm |
| Supplier Device Package | 6-DSBGA (1x1.5) |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) [Max] | -6 V |
| Vgs(th) (Max) @ Id | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Cut Tape (CT) | 1 | $ 0.75 | |
| 10 | $ 0.62 | |||
| 100 | $ 0.48 | |||
| Digi-Reel® | 1 | $ 0.75 | ||
| 10 | $ 0.62 | |||
| 100 | $ 0.48 | |||
| Tape & Reel (TR) | 250 | $ 0.48 | ||
| 500 | $ 0.41 | |||
| 1250 | $ 0.40 | |||
| Texas Instruments | SMALL T&R | 1 | $ 0.92 | |
| 100 | $ 0.63 | |||
| 250 | $ 0.48 | |||
| 1000 | $ 0.32 | |||
Description
General part information
CSD23203W Series
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
This 16.2-mΩ, –8-V, P-Channel device is designed to deliver the lowest on-resistance and gate charge in a small 1 × 1.5 mm outline with excellent thermal characteristics in an ultra-low profile.
Documents
Technical documentation and resources