Discrete Semiconductor Products

SISS52DN-T1-GE3

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MOSFET N-CH 30V 47.1A/162A PPAK

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Discrete Semiconductor Products

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MOSFET N-CH 30V 47.1A/162A PPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SISS52DN-T1-GE3

Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	65 nC
Input Capacitance (Ciss) (Max) @ Vds	2950 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	PowerPAK® 1212-8SH
Power Dissipation (Max)	4.8 W, 57 W
Rds On (Max) @ Id, Vgs	1.2 mOhm
Supplier Device Package	PowerPAK® 1212-8SH
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	-12 V, 16 V
Vgs(th) (Max) @ Id [Max]	2.2 V

Part	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	FET Type	Mounting Type	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Package / Case	Vgs (Max) [Max]	Technology	Vgs(th) (Max) @ Id [Max]	Power Dissipation (Max)	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)
Vishay General Semiconductor - Diodes Division SISS52DN-T1-GE3	2950 pF	4.5 V 10 V	1.2 mOhm	N-Channel	Surface Mount	PowerPAK® 1212-8SH	65 nC	PowerPAK® 1212-8SH	-12 V 16 V	MOSFET (Metal Oxide)	2.2 V	4.8 W 57 W	-55 °C	150 °C	30 V

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General part information

N-Channel 30 V 47.1A (Ta), 162A (Tc) 4.8W (Ta), 57W (Tc) Surface Mount PowerPAK® 1212-8SH

Technical documentation and resources