SISS52 Series
Manufacturer: Vishay General Semiconductor - Diodes Division
MOSFET N-CH 30V 47.1A/162A PPAK
| Part | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | FET Type | Mounting Type | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Package / Case | Vgs (Max) [Max] | Technology | Vgs(th) (Max) @ Id [Max] | Power Dissipation (Max) | Operating Temperature [Min] | Operating Temperature [Max] | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 2950 pF | 4.5 V 10 V | 1.2 mOhm | N-Channel | Surface Mount | PowerPAK® 1212-8SH | 65 nC | PowerPAK® 1212-8SH | -12 V 16 V | MOSFET (Metal Oxide) | 2.2 V | 4.8 W 57 W | -55 °C | 150 °C | 30 V |