Discrete Semiconductor Products

MJD44H11TF

Obsolete

ON Semiconductor

8 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

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Search across all available documentation for this part.

DocumentsDatasheet Package Drawing-369AK-DPAK3 +1

Discrete Semiconductor Products

MJD44H11TF

Obsolete

ON Semiconductor

8 A, 80 V NPN POWER BIPOLAR JUNCTION TRANSISTOR

Deep-Dive with AI

DocumentsDatasheet Package Drawing-369AK-DPAK3 +1

Specifications Series Pricing Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	MJD44H11TF

Current - Collector (Ic) (Max) [Max]	8 A
Current - Collector Cutoff (Max) [Max]	10 µA
DC Current Gain (hFE) (Min) @ Ic, Vce	40 hFE
Frequency - Transition	50 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power - Max [Max]	1.75 W
Supplier Device Package	DPAK
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1 V
Voltage - Collector Emitter Breakdown (Max) [Max]	80 V

MJD44H11T Series

8 A, 80 V NPN Power Bipolar Junction Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Operating Temperature	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJD44H11TF	40 hFE	Surface Mount	150 °C	NPN	10 µA	80 V	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 V	50 MHz	1.75 W	8 A
ON Semiconductor MJD44H11TM

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

MJD44H11T Series

This 8 A, 80 V NPN Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.