MJD44H11T Series

8 A, 80 V NPN Power Bipolar Junction Transistor

Catalog

8 A, 80 V NPN Power Bipolar Junction Transistor

Part	DC Current Gain (hFE) (Min) @ Ic, Vce	Mounting Type	Operating Temperature	Transistor Type	Current - Collector Cutoff (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]
ON Semiconductor MJD44H11TF	40 hFE	Surface Mount	150 °C	NPN	10 µA	80 V	DPAK	DPAK (2 Leads + Tab) SC-63 TO-252-3	1 V	50 MHz	1.75 W	8 A
ON Semiconductor MJD44H11TM

Catalog

8 A, 80 V NPN Power Bipolar Junction Transistor

Key Features

• These Devices are Pb-Free and are RoHS Compliant

Description

This 8 A, 80 V NPN Power Bipolar Junction Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.