NXH40B120MNQ1SNG
ActiveFULL SIC MOSFET MODULE | ELITESIC THREE CHANNEL FULL SIC BOOST, 1200 V, 40 MOHM SIC MOSFET + 1200 V, 40 A SIC DIODE
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NXH40B120MNQ1SNG
ActiveFULL SIC MOSFET MODULE | ELITESIC THREE CHANNEL FULL SIC BOOST, 1200 V, 40 MOHM SIC MOSFET + 1200 V, 40 A SIC DIODE
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Technical Specifications
Parameters and characteristics for this part
| Specification | NXH40B120MNQ1SNG |
|---|---|
| Configuration | Triple, Dual |
| Input | Standard |
| Input Capacitance (Cies) @ Vce | 3.227 nF |
| Mounting Type | Chassis Mount |
| NTC Thermistor | True |
| Operating Temperature [Max] | 175 °C |
| Operating Temperature [Min] | -40 C |
| Package / Case | Module |
| Power - Max [Max] | 156 W |
| Supplier Device Package | 32-PIM (71x37.4) |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tray | 1 | $ 106.65 | |
| 10 | $ 88.64 | |||
| Newark | Each | 1 | $ 101.43 | |
| 5 | $ 98.87 | |||
| 10 | $ 96.30 | |||
| 42 | $ 92.18 | |||
| ON Semiconductor | N/A | 1 | $ 81.55 | |
Description
General part information
NXH40B120MNQ1 Series
The NXH40B120MNQ1 is a EliteSiC power integrated module (PIM) containing a dual full SiC boost stage consisting of three 40mohm/1200V SiC MOSFETs and three 40A/1200V SiC diodes. Three additional 50A/1200V bypass rectifiers used for inrush current limit are included. An on-board thermistor is included.
Documents
Technical documentation and resources