Discrete Semiconductor Products
GNP1070TC-ZE2
ActiveRohm Semiconductor
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 20 A, 0.07 OHM, 5.2 NC, DFN8080K, SURFACE MOUNT
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Discrete Semiconductor Products
GNP1070TC-ZE2
ActiveRohm Semiconductor
GALLIUM NITRIDE (GAN) TRANSISTOR, 650 V, 20 A, 0.07 OHM, 5.2 NC, DFN8080K, SURFACE MOUNT
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Technical Specifications
Parameters and characteristics for this part
| Specification | GNP1070TC-ZE2 |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 20 A |
| Drain to Source Voltage (Vdss) | 650 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 5 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 5.5 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 200 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerDFN |
| Power Dissipation (Max) [Max] | 56 W |
| Rds On (Max) @ Id, Vgs [Max] | 98 mOhm |
| Supplier Device Package | DFN8080K |
| Technology | GaNFET (Gallium Nitride) |
| Vgs (Max) [Max] | 6 V |
| Vgs (Max) [Min] | -10 V |
| Vgs(th) (Max) @ Id | 2.4 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
GNP1070TC-Z Series
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
Documents
Technical documentation and resources