EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
| Part | Rds On (Max) @ Id, Vgs [Max] | Operating Temperature | Technology | Vgs (Max) [Max] | Vgs (Max) [Min] | Supplier Device Package | Power Dissipation (Max) [Max] | Input Capacitance (Ciss) (Max) @ Vds [Max] | Gate Charge (Qg) (Max) @ Vgs | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Vgs(th) (Max) @ Id | Package / Case | Drain to Source Voltage (Vdss) | FET Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | 98 mOhm | 150 °C | GaNFET (Gallium Nitride) | 6 V | -10 V | DFN8080K | 56 W | 200 pF | 5.2 nC | Surface Mount | 20 A | 5.5 V | 5 V | 2.4 V | 8-PowerDFN | 650 V | N-Channel |