GNP1070 Series
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
Manufacturer: Rohm Semiconductor
Catalog
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
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EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
EcoGaN™, 650V 20A DFN8080K, E-mode Gallium-Nitride(GaN) FET
| Part | Vgs (Max) [Min] | Vgs (Max) [Max] | Mounting Type | FET Type | Operating Temperature | Drive Voltage (Max Rds On, Min Rds On) [Min] | Drive Voltage (Max Rds On, Min Rds On) [Max] | Technology | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Package / Case | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds [Max] | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Rohm Semiconductor | -10 V | 6 V | Surface Mount | N-Channel | 150 °C | 5.5 V | 5 V | GaNFET (Gallium Nitride) | 650 V | 56 W | 8-PowerDFN | 2.4 V | 5.2 nC | 20 A | 98 mOhm | 200 pF | DFN8080K |