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8-SOIC
Discrete Semiconductor Products

FDS6898AZ

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ON Semiconductor

DUAL N-CHANNEL LOGIC LEVEL PWM OPTIMIZED POWERTRENCH<SUP>®</SUP> MOSFET 20V, 9.4A, 14MΩ

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8-SOIC
Discrete Semiconductor Products

FDS6898AZ

Active
ON Semiconductor

DUAL N-CHANNEL LOGIC LEVEL PWM OPTIMIZED POWERTRENCH<SUP>®</SUP> MOSFET 20V, 9.4A, 14MΩ

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationFDS6898AZ
Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°C9.4 A
Drain to Source Voltage (Vdss)20 V
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs [Max]23 nC
Input Capacitance (Ciss) (Max) @ Vds1821 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / Case8-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Power - Max [Max]900 mW
Rds On (Max) @ Id, Vgs [Max]14 mOhm
Supplier Device Package8-SOIC
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.20
10$ 0.98
100$ 0.76
500$ 0.65
1000$ 0.53
Digi-Reel® 1$ 1.20
10$ 0.98
100$ 0.76
500$ 0.65
1000$ 0.53
Tape & Reel (TR) 2500$ 0.50
5000$ 0.47
12500$ 0.45
NewarkEach (Supplied on Cut Tape) 1$ 1.77
10$ 1.32
25$ 1.22
50$ 1.13
100$ 1.03
250$ 0.95
500$ 0.87
1000$ 0.81
ON SemiconductorN/A 1$ 0.48

Description

General part information

FDS6898AZ Series

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.