FDS6898AZ Series

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

Catalog

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

Part	Operating Temperature [Min]	Operating Temperature [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id	Mounting Type	Power - Max [Max]	Technology	Rds On (Max) @ Id, Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Configuration	FET Feature	Package / Case	Package / Case [y]	Package / Case [x]
ON Semiconductor FDS6898AZ	-55 °C	150 °C	23 nC	8-SOIC	9.4 A	1.5 V	Surface Mount	900 mW	MOSFET (Metal Oxide)	14 mOhm	1821 pF	20 V	2 N-Channel (Dual)	Logic Level Gate	8-SOIC	3.9 mm	0.154 in
ON Semiconductor FDS6898A	-55 °C	150 °C	23 nC	8-SOIC	9.4 A	1.5 V	Surface Mount	900 mW	MOSFET (Metal Oxide)	14 mOhm	1821 pF	20 V	2 N-Channel (Dual)	Logic Level Gate	8-SOIC	3.9 mm	0.154 in

Catalog

Dual N-Channel Logic Level PWM Optimized PowerTrench® MOSFET 20V, 9.4A, 14mΩ

Key Features

• 9.4 A, 20 V

• RDS(ON)= 14 mΩ @ VGS= 4.5 V

• RDS(ON)= 18 mΩ @ VGS= 2.5 V

• Low gate charge (16 nC typical)

• ESD protection diode (note 3)

• High performance trench technology for extremely low RDS(ON)

• High power and current handling capability

Description

These N-Channel Logic Level MOSFETs are produced using an advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.