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TO-39 TO-205AD
Discrete Semiconductor Products

JANTX2N5153

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Microchip Technology

TRANS GP BJT PNP 80V 2A 3-PIN TO-39 BAG

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Documents2N5151 2N5153
TO-39 TO-205AD
Discrete Semiconductor Products

JANTX2N5153

Active
Microchip Technology

TRANS GP BJT PNP 80V 2A 3-PIN TO-39 BAG

Deep-Dive with AI

Documents2N5151 2N5153

Technical Specifications

Parameters and characteristics for this part

SpecificationJANTX2N5153
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]50 µA
DC Current Gain (hFE) (Min) @ Ic, Vce70 hFE
GradeMilitary
Mounting TypeThrough Hole
Package / CaseTO-39-3 Metal Can, TO-205AD
Power - Max [Max]1 W
QualificationMIL-PRF-19500/545
Supplier Device PackageTO-39
Transistor TypePNP
Vce Saturation (Max) @ Ib, Ic [Max]1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]80 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 11.06
N/A 1$ 18.79
10$ 15.76
100$ 15.00
Microchip DirectN/A 1$ 11.91

Description

General part information

JANTX2N5153L-Transistor Series

This specification covers the performance requirements for PNP, silicon, power, 2N5151 and 2N5153 transistors, complimentary to the 2N5152 and 2N5154 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/545 and Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type as specified in MIL-PRF-19500/545. Provisions for radiation hardness assurance (RHA) to eight radiation levels ("M", "D", "P", "L," "R", "F", "G", and "H") are provided for JANTXV and JANS product assurance levels.

Documents

Technical documentation and resources