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JAN1N5416US

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Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 3A B-MELF TRAY

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B-Axial
Discrete Semiconductor Products

JAN1N5416US

Active
Microchip Technology

RECTIFIER DIODE SWITCHING 2-PIN 100V, 3A B-MELF TRAY

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationJAN1N5416US
Current - Average Rectified (Io)3 A
Current - Reverse Leakage @ Vr1 µA
GradeMilitary
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 ░C
Operating Temperature - Junction [Min]-65 C
Package / CaseAxial, B
QualificationMIL-PRF-19500/411
Reverse Recovery Time (trr)150 ns
Speed200 mA, 500 ns
Supplier Device PackageB, Axial
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]100 V
Voltage - Forward (Vf) (Max) @ If1.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyBulk 100$ 9.57
Microchip DirectN/A 1$ 10.30

Description

General part information

JAN1N5416US-Rectifier Series

This "fast recovery" rectifier diode series is military qualified and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 3.0 amp rated rectifiers for working peak reverse voltages from 50 to 600 volts are hermetically sealed with voidless-glass construction using an internal "Category 1" metallurgical bond. These devices are also available in axial-leaded packages for thru-hole mounting. Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

Documents

Technical documentation and resources