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Technical Specifications
Parameters and characteristics for this part
| Specification | JANTXV2N4261 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 30 mA |
| Current - Collector Cutoff (Max) [Max] | 10 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 30 |
| Grade | Military |
| Mounting Type | Through Hole |
| Package / Case | TO-72-3 Metal Can |
| Power - Max [Max] | 200 mW |
| Qualification | MIL-PRF-19500/511 |
| Supplier Device Package | TO-72 |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 350 mV |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
2N4261 Series
Bipolar (BJT) Transistor PNP 15 V 30 mA 200 mW Through Hole TO-72
Documents
Technical documentation and resources
No documents available