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LFPAK8
Discrete Semiconductor Products

NVMJS3D0N06CTWG

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ON Semiconductor

POWER MOSFET 60 V, 3 MΩ, 150 A, SINGLE N-CHANNEL

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LFPAK8
Discrete Semiconductor Products

NVMJS3D0N06CTWG

Active
ON Semiconductor

POWER MOSFET 60 V, 3 MΩ, 150 A, SINGLE N-CHANNEL

Technical Specifications

Parameters and characteristics for this part

SpecificationNVMJS3D0N06CTWG
Current - Continuous Drain (Id) @ 25°C26.9 A, 139.3 A
Drain to Source Voltage (Vdss)60 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs34 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds2675 pF
Mounting TypeSurface Mount
Operating Temperature [Max]175 ░C
Operating Temperature [Min]-55 °C
Package / Case8-LFPAK56, SOT-1205
Power Dissipation (Max)112.5 W, 4.2 W
QualificationAEC-Q101
Supplier Device Package8-LFPAK
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 1.74
10$ 1.56
25$ 1.48
100$ 1.18
250$ 1.03
500$ 1.00
1000$ 0.80
Digi-Reel® 1$ 1.74
10$ 1.56
25$ 1.48
100$ 1.18
250$ 1.03
500$ 1.00
1000$ 0.80
Tape & Reel (TR) 3000$ 0.77
6000$ 0.74
NewarkEach (Supplied on Full Reel) 1000$ 1.02
ON SemiconductorN/A 1$ 0.78

Description

General part information

NVMJS3D0N06C Series

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.