NVMJS3D0N06C Series

Power MOSFET 60 V, 3 mΩ, 150 A, Single N-Channel

Catalog

Power MOSFET 60 V, 3 mΩ, 150 A, Single N-Channel

Part	Grade	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Technology	Current - Continuous Drain (Id) @ 25°C	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Vgs (Max)	Supplier Device Package	Qualification	Power Dissipation (Max)	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds
ON Semiconductor NVMJS3D0N06CTWG	Automotive	10 V	N-Channel	34 nC	60 V	MOSFET (Metal Oxide)	26.9 A 139.3 A	-55 °C	175 ░C	Surface Mount	8-LFPAK56 SOT-1205	20 V	8-LFPAK	AEC-Q101	4.2 W 112.5 W	4 V	2675 pF

Catalog

Power MOSFET 60 V, 3 mΩ, 150 A, Single N-Channel

Key Features

• Small Footprint (5x6mm)

• Low RDS (ON)

• Low QGand Capacitance

• LFPAK8 Package

• AEC-Q101 Qualified and PPAP Capable

• These Devices are Pb−Free and are RoHS Compliant

Description

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.