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SOT1118
Discrete Semiconductor Products

PBSS5230PAP,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 30 V, 2 A PNP LOW VCESAT TRANSISTOR

SOT1118
Discrete Semiconductor Products

PBSS5230PAP,115

Active
Nexperia USA Inc.

BIPOLAR TRANSISTORS - BJT 30 V, 2 A PNP LOW VCESAT TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

SpecificationPBSS5230PAP,115
Current - Collector (Ic) (Max) [Max]2 A
Current - Collector Cutoff (Max) [Max]100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]160
Frequency - Transition95 MHz
GradeAutomotive
Mounting TypeSurface Mount
Operating Temperature150 °C
Package / Case6-UFDFN Exposed Pad
Power - Max [Max]510 mW
QualificationAEC-Q100
Supplier Device Package6-HUSON (2x2)
Transistor Type2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic420 mv
Voltage - Collector Emitter Breakdown (Max) [Max]30 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.26
1000$ 0.22
Digi-Reel® 1$ 0.57
10$ 0.49
100$ 0.34
500$ 0.26
1000$ 0.22
N/A 2550$ 1.09
Tape & Reel (TR) 3000$ 0.17
MouserN/A 1$ 0.75
10$ 0.52
100$ 0.35
500$ 0.27
1000$ 0.24
3000$ 0.21
6000$ 0.19
9000$ 0.18

Description

General part information

PBSS5230 Series

PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.