
Discrete Semiconductor Products
PBSS5230PAP,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 30 V, 2 A PNP LOW VCESAT TRANSISTOR
Deep-Dive with AI
Search across all available documentation for this part.

Discrete Semiconductor Products
PBSS5230PAP,115
ActiveNexperia USA Inc.
BIPOLAR TRANSISTORS - BJT 30 V, 2 A PNP LOW VCESAT TRANSISTOR
Technical Specifications
Parameters and characteristics for this part
| Specification | PBSS5230PAP,115 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2 A |
| Current - Collector Cutoff (Max) [Max] | 100 nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 160 |
| Frequency - Transition | 95 MHz |
| Grade | Automotive |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 6-UFDFN Exposed Pad |
| Power - Max [Max] | 510 mW |
| Qualification | AEC-Q100 |
| Supplier Device Package | 6-HUSON (2x2) |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 420 mv |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 30 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
PBSS5230 Series
PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Documents
Technical documentation and resources