Discrete Semiconductor Products

PBSS5230PAP,115

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TRANS 2PNP 30V 2A 6HUSON

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Discrete Semiconductor Products

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TRANS 2PNP 30V 2A 6HUSON

Technical Specifications

Parameters and characteristics for this part

Specification	PBSS5230PAP,115

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	160
Frequency - Transition	95 MHz
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-UFDFN Exposed Pad
Power - Max [Max]	510 mW
Qualification	AEC-Q100
Supplier Device Package	6-HUSON (2x2)
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic	420 mv
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Power - Max [Max]	Mounting Type	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector Cutoff (Max) [Max]	Operating Temperature	Supplier Device Package	Current - Collector (Ic) (Max) [Max]	Qualification	Vce Saturation (Max) @ Ib, Ic	Package / Case	Grade	Transistor Type
Freescale Semiconductor - NXP PBSS5230T,215	480 mW	Surface Mount	200 MHz	30 V	200	100 nA	150 °C	TO-236AB	2 A	AEC-Q100	350 mV	SC-59 SOT-23-3 TO-236-3	Automotive	PNP
Freescale Semiconductor - NXP PBSS5230PAP,115	510 mW	Surface Mount	95 MHz	30 V	160	100 nA	150 °C	6-HUSON (2x2)	2 A	AEC-Q100	420 mv	6-UFDFN Exposed Pad	Automotive	2 PNP (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 30V 2A 95MHz 510mW Surface Mount 6-HUSON (2x2)

Technical documentation and resources