Catalog
30 V, 2 A PNP low VCEsat transistor
Description
AI
PNP low VCEsattransistor in a SOT23 small Surface-Mounted Device (SMD) plastic package.
Beta
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30 V, 2 A PNP low VCEsat transistor
30 V, 2 A PNP low VCEsat transistor
| Part | Voltage - Collector Emitter Breakdown (Max) [Max] | Power - Max [Max] | Transistor Type | Mounting Type | Current - Collector (Ic) (Max) [Max] | Supplier Device Package | Current - Collector Cutoff (Max) [Max] | DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | Qualification | Package / Case | Frequency - Transition | Operating Temperature | Grade | Vce Saturation (Max) @ Ib, Ic |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Nexperia USA Inc. | 30 V | 480 mW | PNP | Surface Mount | 2 A | TO-236AB | 100 nA | 200 | AEC-Q100 | SC-59 SOT-23-3 TO-236-3 | 200 MHz | 150 °C | Automotive | 350 mV |
 Nexperia USA Inc. | 30 V | 510 mW | 2 PNP (Dual) | Surface Mount | 2 A | 6-HUSON (2x2) | 100 nA | 160 | AEC-Q100 | 6-UFDFN Exposed Pad | 95 MHz | 150 °C | Automotive | 420 mv |