Discrete Semiconductor Products

SIE854DF-T1-GE3

Obsolete

MOSFET N-CH 100V 60A 10POLARPAK

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Discrete Semiconductor Products

Obsolete

MOSFET N-CH 100V 60A 10POLARPAK

Technical Specifications

Parameters and characteristics for this part

Specification	SIE854DF-T1-GE3

Current - Continuous Drain (Id) @ 25°C	60 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3100 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	10-PolarPAK® (L)
Power Dissipation (Max)	125 W, 5.2 W
Rds On (Max) @ Id, Vgs	14.2 mOhm
Supplier Device Package	10-PolarPAK® (L)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id [Max]	4.4 V

Part	Operating Temperature [Min]	Operating Temperature [Max]	Drain to Source Voltage (Vdss)	FET Type	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs(th) (Max) @ Id [Max]	Package / Case	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Technology	Power Dissipation (Max)
Vishay General Semiconductor - Diodes Division SIE854DF-T1-GE3	-55 °C	150 °C	100 V	N-Channel	Surface Mount	75 nC	10 V	14.2 mOhm	10-PolarPAK® (L)	3100 pF	4.4 V	10-PolarPAK® (L)	60 A	20 V	MOSFET (Metal Oxide)	5.2 W 125 W
Vishay General Semiconductor - Diodes Division SIE854DF-T1-E3	-55 °C	150 °C	100 V	N-Channel	Surface Mount	75 nC	10 V	14.2 mOhm	10-PolarPAK® (L)	3100 pF	4.4 V	10-PolarPAK® (L)	60 A	20 V	MOSFET (Metal Oxide)	5.2 W 125 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 100 V 60A (Tc) 5.2W (Ta), 125W (Tc) Surface Mount 10-PolarPAK® (L)

Technical documentation and resources